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Variable Capacitance Diodes
MA2S376
Silicon epitaxial planar type
Unit : mm
For VCO of a UHF radio I Features
* Small series resistance rD * SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package
0.15 min.
0.15 min.
0.27 - 0.02
0.8 0.1
+ 0.05
1.3 0.1 1.7 0.1
I Absolute Maximum Ratings Ta = 25C
Reverse voltage (DC) Junction temperature Storage temperature VR Tj Tstg 6 150 -55 to +150 V C C
0.7 0.1
Parameter
Symbol
Rating
Unit
1 : Anode 2 : Cathode SS-Mini Type Package (2-pin)
Marking Symbol: H
I Electrical Characteristics Ta = 25C
Parameter Reverse current (DC) Diode capacitance Series resistance* Symbol IR CD(1V) CD(3V) rD VR = 6 V VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz CD = 9 pF, f = 470 MHz 14.00 6.80 Conditions Min Typ Max 10 16.00 8.90 0.3 Unit nA pF pF
Note) 1 Rated input/output frequency: 470 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
0 to 0.1
0.13 - 0.02
+ 0.05
0.27 - 0.02
+ 0.05
1
MA2S376
CD VR
100 f = 1 MHz Ta = 25C 120
Variable Capacitance Diodes
IF V F
Ta = 25C
1.04
CD Ta
f = 1 MHz VR = 1 V 3V
50
100
1.03
Diode capacitance CD (pF)
30 20
Forward current IF (mA)
10
60
CD(Ta) CD(Ta = 25C)
0 0.2 0.4 0.6 0.8 1.0 1.2
80
1.02
1.01
5 3 2
40
1.00
20
0.99
1
0
4
8 12 16 20 24 28 32 36 40
0
0.98
0
20
40
60
80
100
Reverse voltage VR (V)
Forward voltage VF (V)
Ambient temperature Ta (C)
IR T a
100 VR = 6 V
Reverse current IR (nA)
10
1
0.1
0.01
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (C)
2

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